HIGH ASPECT RATIO SiLICON NANOFABRICATION (HARSiN)

نویسندگان

  • J. O’Brien
  • B. McCarthy
  • A. M. Kelleher
  • B. O’Neill
  • P. J. Hughes
چکیده

A simplified process to fabricate high aspect ratio nanostructures in silicon combining electron beam lithography and deep reactive ion etching (DRIE) is presented. A stable process (HARSiN) has been developed without the need for complicated resist/hard mask processing or complex dry etch technologies. This is achieved using commercially available ZEP520A resist from Nippon Zeon Co., Ltd which allows high resolution ebeam imaging (≤50nm) as well as affords high plasma etch resistance to a continuous room temperature carbon/fluorine DRIE Si etch chemistry developed in this work. Using this simplified lithography/etch process sequence, high aspect ratio (>14:1) silicon nanometer structures are reported for nanotechnology applications, which are reviewed in this paper.

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تاریخ انتشار 2005